The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and …

The superior electro-thermal properties of silicon carbide (SiC) power devices permit higher
temperature of operation and enable higher power density compared with silicon devices. …

This paper examines dynamic temperature-sensitive electrical parameters (TSEPs) for SiC
MOSFETs. It is shown that the switching rate of the output current (dI DS /dt) coupled with the …

When deriving a master equation for a multipartite weakly-interacting open quantum
systems, dissipation is often addressed locally on each component, ie ignoring the coherent …

The biological activities of ethanol and petroleum ether extracts from leaves and fruits of
Schinus molle against adults of Blattella germanica were examined by repellence test and …

In this paper, a comprehensive comparative analysis is performed on the short circuit (SC)
withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench …

Device-to-device parametric variations (eg threshold voltage V TH , gate resistance R G and
junction temperature T J ) can cause variations in the short-circuit currents conducted …

In this article, a method for evaluating the implications of threshold voltage (VTH) drift from
gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between …

This paper investigates the impact of parameter variation between parallel connected SiC
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …

Junction temperature sensing is an integral part of both online and offline condition monitoring
where direct access to the bare die surface is not available. Given a defined power input, …