User profiles for M. M. Losch
Max LoschPhD student, Max Planck Institute for Informatics Verified email at mpi-inf.mpg.de Cited by 129 |
Visual pathways from the perspective of cost functions and multi-task deep neural networks
Vision research has been shaped by the seminal insight that we can understand the higher-tier
visual cortex from the perspective of multiple functional pathways with different goals. In …
visual cortex from the perspective of multiple functional pathways with different goals. In …
Analyzing the dependency of convnets on spatial information
Intuitively, image classification should profit from using spatial information. Recent work,
however, suggests that this might be overrated in standard CNNs. In this paper, we are pushing …
however, suggests that this might be overrated in standard CNNs. In this paper, we are pushing …
35 nm metamorphic HEMT MMIC technology
…, A Tessmann, H Massler, R Losch… - … on indium phosphide …, 2008 - ieeexplore.ieee.org
… extrinsic transconductance gm, max of 2500mS/mm the source resistance has been
reduced to 0.1 Q.mm. An It of 515 GHz was achieved for a 2 x 10 11m device. Based on this …
reduced to 0.1 Q.mm. An It of 515 GHz was achieved for a 2 x 10 11m device. Based on this …
Patients with severe Graves' ophthalmopathy have a higher risk of relapsing hyperthyroidism and are unlikely to remain in remission
AK Eckstein, H Lax, C Lösch, D Glowacka… - Clinical …, 2007 - Wiley Online Library
… mm), proptosis (in mm), inflammatory signs (redness and swelling of lids and conjunctiva),
eye motility (monocular excursions measured with Kestenbaum glasses). In cases of reduced …
eye motility (monocular excursions measured with Kestenbaum glasses). In cases of reduced …
Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology
…, O Kappeler, M Walther, R Losch - 16th IPRM. 2004 …, 2004 - ieeexplore.ieee.org
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs
substrates for both millimeter-wave and mixed-signal applications are discussed in this paper. …
substrates for both millimeter-wave and mixed-signal applications are discussed in this paper. …
Millimeter-wave circuits based on advanced metamorphic HEMT technology
…, W Reinert, M Walther, R Losch… - … and Millimeter …, 2004 - ieeexplore.ieee.org
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length on
4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-…
4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-…
A 300 GHz mHEMT amplifier module
…, M Zink, M Kuri, M Riessle, R Losch… - … Indium Phosphide & …, 2009 - ieeexplore.ieee.org
… At Vd = 1 V, a peak transconductance of more than 2500 mS/mm was measured. By using a
high … Rs of 0.1 Ω⋅mm the on-resistance Ron of the mHEMT at peak gm is only 0.25 Ω⋅mm. …
high … Rs of 0.1 Ω⋅mm the on-resistance Ron of the mHEMT at peak gm is only 0.25 Ω⋅mm. …
Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications
…, V Hurm, H Massler, M Riessle, R Lösch… - 2011 IEEE 9th …, 2011 - ieeexplore.ieee.org
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35
nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave …
nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave …
A non-invasive technique for 3-dimensional assessment of articular cartilage thickness based on MRI part 2: validation using CT arthrography
M Haubner, F Eckstein, M Schnier, A Lösch… - Magnetic Resonance …, 1997 - Elsevier
… ,31 leading to an isotropic voxel volume with a re olution of 0.31 mm in case of MRT and
to 0.3 mm (sagittal sections) or 0.2 mm (transverse sections) in case of CT. The three-dimen…
to 0.3 mm (sagittal sections) or 0.2 mm (transverse sections) in case of CT. The three-dimen…
Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm
…, H Nickel, W Schlapp, R Losch - IEEE electron device …, 1991 - ieeexplore.ieee.org
… of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest
frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This …
frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This …