User profiles for M. M. Losch

Max Losch

PhD student, Max Planck Institute for Informatics
Verified email at mpi-inf.mpg.de
Cited by 129

Visual pathways from the perspective of cost functions and multi-task deep neural networks

HS Scholte, MM Losch, K Ramakrishnan, EHF de Haan… - cortex, 2018 - Elsevier
Vision research has been shaped by the seminal insight that we can understand the higher-tier
visual cortex from the perspective of multiple functional pathways with different goals. In …

Analyzing the dependency of convnets on spatial information

Y Fan, Y Xian, MM Losch, B Schiele - … 28–October 1, 2020, Proceedings 42, 2021 - Springer
Intuitively, image classification should profit from using spatial information. Recent work,
however, suggests that this might be overrated in standard CNNs. In this paper, we are pushing …

35 nm metamorphic HEMT MMIC technology

…, A Tessmann, H Massler, R Losch… - … on indium phosphide …, 2008 - ieeexplore.ieee.org
… extrinsic transconductance gm, max of 2500mS/mm the source resistance has been
reduced to 0.1 Q.mm. An It of 515 GHz was achieved for a 2 x 10 11m device. Based on this …

Patients with severe Graves' ophthalmopathy have a higher risk of relapsing hyperthyroidism and are unlikely to remain in remission

AK Eckstein, H Lax, C Lösch, D Glowacka… - Clinical …, 2007 - Wiley Online Library
mm), proptosis (in mm), inflammatory signs (redness and swelling of lids and conjunctiva),
eye motility (monocular excursions measured with Kestenbaum glasses). In cases of reduced …

Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology

…, O Kappeler, M Walther, R Losch - 16th IPRM. 2004 …, 2004 - ieeexplore.ieee.org
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs
substrates for both millimeter-wave and mixed-signal applications are discussed in this paper. …

Millimeter-wave circuits based on advanced metamorphic HEMT technology

…, W Reinert, M Walther, R Losch… - … and Millimeter …, 2004 - ieeexplore.ieee.org
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length on
4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-…

A 300 GHz mHEMT amplifier module

…, M Zink, M Kuri, M Riessle, R Losch… - … Indium Phosphide & …, 2009 - ieeexplore.ieee.org
… At Vd = 1 V, a peak transconductance of more than 2500 mS/mm was measured. By using a
high … Rs of 0.1 Ω⋅mm the on-resistance Ron of the mHEMT at peak gm is only 0.25 Ω⋅mm. …

Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications

…, V Hurm, H Massler, M Riessle, R Lösch… - 2011 IEEE 9th …, 2011 - ieeexplore.ieee.org
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35
nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave …

A non-invasive technique for 3-dimensional assessment of articular cartilage thickness based on MRI part 2: validation using CT arthrography

M Haubner, F Eckstein, M Schnier, A Lösch… - Magnetic Resonance …, 1997 - Elsevier
… ,31 leading to an isotropic voxel volume with a re olution of 0.31 mm in case of MRT and
to 0.3 mm (sagittal sections) or 0.2 mm (transverse sections) in case of CT. The three-dimen…

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

…, H Nickel, W Schlapp, R Losch - IEEE electron device …, 1991 - ieeexplore.ieee.org
… of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest
frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This …