Context.—Most of the world's refugees are displaced within the developing world. The impact
of torture on such refugees is unknown.Objective.—To examine the impact of torture on …

… Until a few years ago, heroin users were not using the intravenous method (Shrestha,
1986) but now 37% of heroin dependents are using this (Shrestha, 1989). The number of …

Patient health record (PHR) is a rising patient centric model which is frequently outsourced
to store at third party. This addresses the issue in privacy such as hiding the sensitive health …

… A thin AlN spacer layer of varying thickness (0–2 nm) and a 25-nm-thick undoped AlGaN
barrier layer are grown on top. The entire epitaxial layer is grown at high temperature. The Al …

… We have explored AlGaN/GaN HEMTs with nonrecess and 3-nm recess gates and achieved
… Notably, the device with gate recess deeper than 3 nm offer increasing Gm with Vth close to …

In this work, a new AlGaN/GaN vertical high electron mobility transistor (HEMT) with silicon
oxide (SiO 2 ) current blocking layer (CBL) is designed and studied numerically for high-…

CLIPPERS is a rare, chronic inflammatory neurological syndrome affecting multiple regions
of the brain including the brainstem, cerebellum, and spinal cord. More than 100 cases have …

… HEMT with a 9-nm-thick recess gate (Sample II) which are shown in Figs… An AlN spacer layer
(1.24 nm) is deposited to enhance the … Finally, 2 nm GaN cap layer is deposited after 8.5 nm …

… nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain
current increases with increasing spacer layer thickness and reach maximum value at 1.2nm …

… Then, \(\hbox {SiO}_{2}\) CBL of thickness varying from 200 to 800 nm are deposited by …
}\) layer is etched for vertical aperture of the device and 50 nm GaN and 15 nm \(\hbox {Al}_{0.25}\…