Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in
theory and experiment. The emphasis is on the interactions of these substitutional dopants with …

One of the "fundamental" problems in the continued scaling of MOSFETs is the 60 mV/decade
room temperature limit in subthreshold slope. In this paper, we report initial studies on a …

The advent of digital microfluidic lab-on-a-chip (LoC) technology offers a platform for developing
diagnostic applications with the advantages of portability, reduction of the volumes of …

One of the fundamental problems in the continued scaling of transistors is the 60 mV/dec room
temperature limit in the subthreshold slope. In part I this work, a novel transistor based on …

We have demonstrated symmetrically high levels of electrical activation of both p - and n -type
dopants in germanium. Rapid thermal annealing of various commonly implanted dopant …

… Feng, PB Griffin, and JD Plummer are with the Department of Electrical Engineering, …
Gopalakrishnan, PB Griffin, K. Ma, MD Deal, and JD Plummer, “MOSFETs and high-speed …

The integrated circuit (IC) industry has followed a steady path of shrinking device geometries
for more than 30 years. It is widely believed that this process will continue for at least …

… Reasons behind the shift have been explored in another paper (Estioko-Griffin and Griffin,
in press). Briefly stated, forest foods are difficult to collect, necessitate residence moves over …

Bipolar resistive switching was found in thin polycrystalline Ti O 2 films formed by the thermal
oxidation of sputtered Ti films. With a Ag top electrode, Ti O 2 film, and Pt bottom electrode, …

An identical set of thermal oxidation and nitridation experiments has been performed for
four common dopants and self-diffusion in Si. Selectively perturbing the equilibrium point-defect …